Time-dependent quantum transport and nonquasistatic effects in carbon nanotube transistors
Authors:
- 13 November 2006
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (20) , 203122
Abstract
Nonquasistatic effects in ac characteristics of carbon nanotube field-effect transistors are examined by solving a full time-dependent, open-boundary Schrödinger equation. The nonquasistatic characteristics, such as the finite channel charging time, and the dependence of small signal transconductance and gate capacitance on the frequency, are explored. The validity of the widely used quasistatic approximation is examined. The results show that the quasistatic approximation overestimates the transconductance and gate capacitance at high frequencies, but gives a more accurate value for the intrinsic cutoff frequency over a wide range of bias conditions.Keywords
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