Self-organized gate stack of Ge nanosphere/SiO2/Si1-xGex enables Ge-based monolithically-integrated electronics and photonics on Si platform
Authors:
- 1 June 2018
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 157-158
Abstract
We report the first-of-its-kind, self-organized gate stack of Ge nanosphere (NP) gate/SiO 2 /Si 1-x Ge x channel fabricated in a single oxidation step. Process-controlled tunability of the Ge NP size (5-90nm), SiO 2 thickness (2-4nm), and Ge content (x = 0.65-0.85) and strain engineering (ε comp = 1-3%) of the Si 1-x Ge x are achieved. We demonstrated Ge junctionless (JL) n-FETs and photoMOSFETs (PTs) as amplifier and photodetector, respectively, for Ge receivers. L G of 75nm JL n-FETs feature I ON /I OFF > 5×10 8 , I ON > 500μA/μm at V DS = 1V, T= 80K. Ge-PTs exhibit superior photoresponsivity >1,000A/W and current gain linearity ranging from nW-mW for 850nm illumination. Size-tunable photo-luminescence (PL) of 300-1600nm (NUV-NIR) are observed on 5-100nm Ge NPs. Our gate stack of Ge NP/SiO 2 /Si 1-x Ge x enables a practically achievable building block for monolithically-integrated Ge electronic and photonic ICs (EPICs) on Si.Keywords
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