Thickness Dependence of Low-Frequency Noise in MoS2 Field-Effect Transistors With Enhanced Back-Gate Control
- 20 March 2018
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 39 (5) , 739-741
Abstract
Low-frequency noise has become one of the major limitations on further exploration for the ultimate performance of nanoelectronic devices based on novel two-dimensional (2D) materials. Here, the low-frequency 1/f noise has been qualitatively investigated on MoS2 field-effect transistors (FETs) with different layer numbers. 1/f noise in multi-layer (2-layer and thicker) MoS2 devices follows the Hooge mobility fluctuation model. But for monolayer MoS2 FET, 1/f noise is dominated by the carrier number fluctuation model in a weak accumulation regime, while the mobility fluctuation model is the dominant source in a strong accumulation regime. Such 1/f noise characteristics are explained with the depth of intrinsic defect trap energy levels in MoS2 thin films through first-principle calculation and the enhanced gate control by using engineered back-gate stack.Keywords
Funding Information
- NSFC (61704030, 61474029, 61522404, 61427901)
- Shanghai Pujiang Program (17PJ1400500)
- National High Technology Research and Development Program (2015AA016501)
- National Major Projects of Science and Technology (2017ZX02315005)
- Support Plans for the Youth Top-Notch Talents of China
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