Re-engineering silicon: Si-Ge heterojunction bipolar technology
Author:
- J.D. CresslerJCJ.D. Cressler
- 1 March 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Spectrum
- Vol. 32 (3) , 49-55
Abstract
Thanks to refined techniques of material growth, circuits based on Si-Ge devices have made their way to market and bode especially well for wireless communications. The author reviews material properties, HBT technologies and circuit applicationsKeywords
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