Photoluminescence from Si irradiated with 1.5-MeV electrons at 100 °K
Authors:
- 1 July 1976
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (7) , 3010-3015
Abstract
The effects which low‐temperature electron irradiation have on the photoluminescence from Si provide new information regarding irradiation‐induced defects which participate in radiative recombination. Previous identifications of the 0.8–1.0‐eV band with the divacancy and the 0.6–0.8‐eV band with the Si‐G15 (or K) center are apparently in error. The 0.8–1.0‐eV band appears only after anneals above ∼300 °K, whereas the 0.6–0.8‐eV band can be detected after 100 °K anneals. The lower‐energy band may be due to radiative recombination at an oxygen‐modified divacancy or a carbon‐oxygen‐vacancy complex. The 0.8–1.0‐eV band may involve a carbon‐related defect. A band between 0.7 and 1.0 eV, which is seen only from boron‐doped crystals, may arise from a defect involving boron and intrinsic defects.Keywords
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