Degradation of AlxGa1−xAs heterojunction electroluminescent devices

Authors:

1 July 1974

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 25 (1) , 82-85
DOI:10.1063/1.1655290

Abstract

Experimental results are presented correlating the operating life of (AlGa)As heterojunction diodes with recombination region doping and Al concentration. For a given doping level, the operating life is shown to increase with the addition of Al. The relationship between spontaneous emission degradation and lasing properties has also been studied.

Keywords

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