Growth and characteristics of optical single crystals for UV/VUV applications
Authors:
- Kiyoshi ShimamuraKSKiyoshi Shimamura
- Encarnación G. VílloraEVEncarnación G. Víllora
- 1 December 2011
- journal article
- review article
- Published by Elsevier in Journal of Fluorine Chemistry
- Vol. 132 (12) , 1040-1046
Abstract
No abstract availableKeywords
This publication has 32 references indexed in Scilit:
- Optical and Electrical Single Crystals for UV/VUV Applications2010
- Advantageous growth characteristics and properties of SrAlF5 compared with BaMgF4 for UV/VUV nonlinear optical applicationsJournal of Crystal Growth, 2005
- Large-size β-Ga2O3 single crystals and wafersJournal of Crystal Growth, 2004
- Substrates for gallium nitride epitaxyMaterials Science and Engineering: R: Reports, 2002
- Lasing mechanism of InGaN-GaN-AlGaN MQW laser diode grown on SiC by low-pressure metal-organic vapor phase epitaxyIEEE Journal of Selected Topics in Quantum Electronics, 1998
- Quasi-phase-matched second harmonic generation: tuning and tolerancesIEEE Journal of Quantum Electronics, 1992
- Absorption and Reflection of Vapor Grown Single Crystal Platelets of β-Ga2O3Japanese Journal of Applied Physics, 1974
- Optical Absorption and Photoconductivity in the Band Edge ofPhysical Review B, 1965
- Growth of Oxide Crystals by the Flux MethodJournal of the American Ceramic Society, 1964
- Interactions between Light Waves in a Nonlinear DielectricPhysical Review B, 1962