Catalytic role of Au in Ni/Au contact on GaN(0001)
- 11 June 2001
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (24) , 3773-3775
Abstract
We investigated the structural behavior of the Ni/Au contact on GaN(0001) and found the catalytic role of Au during annealing, using in situ x-ray scattering. The oxidation kinetics of Ni during annealing in air was greatly affected by the presence of Au. The accelerated GaN decomposition and Ni nitride formation during annealing in also provide evidence of the catalytic role of Au. The results suggest that oxidized Ni/Au ohmic contact exhibit better thermal stability than that of the annealed Ni/Au contacts.
Keywords
This publication has 15 references indexed in Scilit:
- GaN: Processing, defects, and devicesJournal of Applied Physics, 1999
- Low-resistance ohmic contacts to p-type GaNApplied Physics Letters, 1999
- A review of the metal–GaN contact technologySolid-State Electronics, 1998
- Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substratesApplied Physics Letters, 1998
- The effect of thermal annealing on the Ni/Au contact of p-type GaNJournal of Applied Physics, 1998
- Interfacial reactions between nickel thin films and GaNJournal of Applied Physics, 1997
- High temperature characteristics of AlGaN/GaN modulation doped field-effect transistorsApplied Physics Letters, 1996
- Schottky contact and the thermal stability of Ni on n-type GaNJournal of Applied Physics, 1996
- Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °CApplied Physics Letters, 1995
- High-power InGaN/GaN double-heterostructure violet light emitting diodesApplied Physics Letters, 1993