Electrical Properties of Selenium. II. Microcrystalline Selenium
Author:
- 1 October 1951
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 22 (10) , 1265-1278
Abstract
The electrical properties of selenium have been studied in their dependence on history of preparation, i.e., as functions of temperature of initial liquid selenium, quench procedure, nucleation procedure, temperature of crystallization, and time of crystallization. The electrical properties of melt single crystals and the microcrystalline matrix of these crystals have been compared. The influence of nonmetals S, O2, I2, in small quantities on the electrical properties has been determined. Carrier densities and effective mobilities as functions of temperature of measurement have been estimated from data on thermoelectric powers and resistivities. The order of the carrier densities have been checked by measurements of the voltage dependence of capacity of completely vacuum prepared rectifiers. The frequency dependence of resistivity has been determined to gain insight into the nature of the effective mobilities.Keywords
This publication has 5 references indexed in Scilit:
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- Hall Effect in a Selenium Single CrystalNature, 1950
- A Study of Electrical Forming Phenomena at Selenium ContactsProceedings of the Physical Society. Section B, 1950
- Conductivity of Liquid Selenium-200°–500°CJournal of Applied Physics, 1950
- Thermoelectric Power and Mobility of Carriers in SeleniumPhysical Review B, 1950