Spontaneous direct bonding of thick silicon nitride
Authors:
- 1 September 1997
- journal article
- Published by IOP Publishing in Journal of Micromechanics and Microengineering
- Vol. 7 (3) , 111-113
Abstract
Wafers with LPCVD silicon-rich nitride layers have been successfully direct bonded to silicon-rich nitride and boron-doped silicon surfaces. A chemical - mechanical polishing treatment was necessary to reduce the surface roughness of the nitride before bonding. The measured surface energies of the room-temperature bond were comparable to values found for Si - Si hydrophilic bonding. A mechanism similar to this bonding is suggested for silicon nitride bonding.Keywords
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