Aluminum Nitride Epitaxially Grown on Silicon: Orientation Relationships
Authors:
- Mizuho MoritaMMMizuho Morita
- Seiji IsogaiSISeiji Isogai
- Nobuhiro ShimizuNSNobuhiro Shimizu
- Kazuo TsubouchiKTKazuo Tsubouchi
- Nobuo MikoshibaNMNobuo Mikoshiba
- 1 March 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (3) , L173-175
Abstract
Epitaxial aluminum nitride (AlN) films have been grown on (111), (110) and (100)-oriented Si substrates using metalorganic chemical vapor deposition (MO-CVD). We found that (0001)-oriented AlN films were grown on the above three planes of Si substrates.Keywords
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