Optical properties of the layered semiconductor ZnIn2S4
Authors:
- U. GiorgianniUGU. Giorgianni
- V. GrassoVGV. Grasso
- G. MondioGMG. Mondio
- G. SaittaGSG. Saitta
- 2 October 1978
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 68 (2) , 247-248
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- Recombination process of photoexcited carriers in ZnIn2 S4Physica Status Solidi (a), 1977
- Transport properties of semiconducting ZnIn2S4Physica Status Solidi (a), 1976
- Dielectric Functions in Wavelength and Thermally Modulated SpectroscopyCanadian Journal of Physics, 1975
- Modified Kramers–Kronig Analysis of Optical SpectraJournal of the Optical Society of America, 1971
- Properties of the Ternary Compound ZnIn2S4 at High Electric FieldJournal of Applied Physics, 1971
- Luminescence of ZnIn2S4 and ZnIn2S4:Cu Single CrystalsJournal of the Physical Society of Japan, 1964