Temperature and light intensity dependence of photoconductivity in off-stoichiometric hydrogenated amorphous silicon nitride
- 1 June 1986
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 83 (1-2) , 1-11
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Photoelectronic properties of amorphous silicon nitride compoundsSolar Energy Materials, 1984
- Photo-Induced ESR in Amorphous Si1-xNx:H FilmsJapanese Journal of Applied Physics, 1984
- Doping effects in off-stoichiometric glow discharge amorphous silicon nitrideApplied Physics Letters, 1984
- Dopant states in-Si: H. I. Tight-binding-model resultsPhysical Review B, 1983
- Drift Mobility and Photoconductivity in Amorphous SiliconPhysica Status Solidi (b), 1978