Effect of interface states on sub-threshold response of III–V MOSFETs, MOS HEMTs and tunnel FETs
Authors:
- W.C. KaoWKW.C. Kao
- A. AliAAA. Ali
- E. HwangEHE. Hwang
- S. MookerjeaSMS. Mookerjea
- S. DattaSDS. Datta
- 1 December 2010
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 54 (12) , 1665-1668
Abstract
No abstract availableKeywords
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