Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments
- 24 August 2020
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 117 (8) , 082103
Abstract
Plasma etching of p-type GaN creates n-type nitrogen vacancy (VN) defects at the etched surface, which can be detrimental to device performance. In mesa isolated diodes, etch damage on the sidewalls degrades the ideality factor and leakage current. A treatment was developed to recover both the ideality factor and leakage current, which uses UV/O3 treatment to oxidize the damaged layers followed by HF etching to remove them. The temperature dependent I–V measurement shows that the reverse leakage transport mechanism is dominated by Poole–Frenkel emission at room temperature through the etch-induced VN defect. Depth resolved cathodoluminescence confirms that the damage is limited to first several nanometers and is consistent with the VN defect.Keywords
Funding Information
- Office of Naval Research
This publication has 22 references indexed in Scilit:
- Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructuresApplied Physics Letters, 2012
- Luminescence properties of defects in GaNJournal of Applied Physics, 2005
- Poole-Frenkel electron emission from the traps in AlGaN/GaN transistorsJournal of Applied Physics, 2004
- Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor depositionApplied Physics Letters, 2004
- Electrochemical Etching of 6H-SiC Using Aqueous KOH Solutions with Low Surface RoughnessJapanese Journal of Applied Physics, 2003
- Vacancy Defects as Compensating Centers in Mg-Doped GaNPhysical Review Letters, 2003
- Cl[sub 2]/Ar High-Density-Plasma Damage in GaN Schottky DiodesJournal of the Electrochemical Society, 2000
- Electrical effects of plasma damage in p-GaNApplied Physics Letters, 1999
- Depth and thermal stability of dry etch damage in GaN Schottky diodesApplied Physics Letters, 1999
- Behavior of 2.8- and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densitiesPhysical Review B, 1999