The role of self interstitials in As+ diffusion of implanted silicon
Authors:
- A. ParisiniAPA. Parisini
- A. BourretABA. Bourret
- A. ArmigliatoAAA. Armigliato
- 31 January 2021
- book chapter
- Published by Taylor & Francis
- p. 491-496
Abstract
Arsenic implanted specimens after liquid phase epitaxy followed by annealing treatment were studied in the range 450° C-900° C. A detailed analysis of As and interstitial profiles reveals that arsenic diffuses, starting from 550° C, in two stages : as an interstitial-arsenic complex for 550° C ≤ T ≤ 650° C and independently of interstitials for T ≥ 750* C. It is shown that interstitials are created during the liquid to solid transformation prior to the annealing treatments.Keywords
This publication has 1 reference indexed in Scilit:
- Electron Microscopy of As Supersaturated SiliconJournal of the Electrochemical Society, 1986