Resistance Switching and Failure Behavior of the MoOx/Mo2C Heterostructure

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Abstract
With the rapid demand for high-performance and power-efficient memristive and synaptic systems, more 2D heterostructures with improved resistance switching (RS) properties are still urgently in need for next-generation devices. Here, we report the RS behaviors of vertical MoOx/Mo2C heterostructures fabricated by controllable thermal oxidation and uncover the failure behavior for the first time. It is found that the MoOx/Mo2C heterostructure exhibits bipolar RS with a low set/reset voltage of +0.5/–0.3 V, an ultralow power consumption of 5 × 10–8 W, and an on/off ratio of 102, which is ascribed to the transport of the internal oxygen ions of MoOx. Furthermore, the failure behavior of RS behaviors of the MoOx/Mo2C heterostructure under a higher work voltage is revealed. It indicates that the amorphization of the pristine crystalline MoOx layer could block the movement of the internal oxygen ions in the vertical direction. The excellent RS performance induced by the synergy of MoOx and Mo2C and the demonstration of the failure behavior enable the potential applications of the 2D heterostructure in related memory devices and biological neural networks.
Funding Information
  • Guangzhou Municipal Science and Technology Program key projects (201904010450)
  • National Natural Science Foundation of China (51772335, 52072415)
  • Guangdong Basic and Applied Basic Research Foundation (2021A1515012387)

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