Properties of GaP Schottky barrier diodes at elevated temperatures
Authors:
- 31 May 1969
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (5) , 341-346
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Metal-semiconductor surface barriersSolid-State Electronics, 1966
- Depletion Capacitance and Diffusion Potential of Gallium Phosphide Schottky-Barrier DiodesJournal of Applied Physics, 1966
- Single crystal gallium phosphide solar cellsAdvanced Energy Conversion, 1965