‘‘Buffer-layer’’ technique for the growth of single crystal SiC on Si
Authors:
- 1 March 1984
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (5) , 525-527
Abstract
The nature of the buffer layers needed for the single crystal deposition of cubic SiC on Si substrates was studied. It is concluded that the buffer layer is a stressed monocrystalline layer of cubic SiC.Keywords
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