Selective Ohmic Contact Formation on Schottky Type AlGaN/GaN UV Sensors Using Local Breakdown

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Abstract
Local annealing method was developed to change the Ni–AlGaN/GaN and Ni–GaN rectifying contacts into ohmic contacts by using the dielectric breakdown of a sacrificial insulator. The current increased 105 times in an AlGaN/GaN Schottky diode as a result of the annealing step. An interdigitated Schottky metal– semiconductor–metal ultraviolet (UV) sensor was fabricated using the locally annealed electrodes. The UV to visible rejection ratio (UVRR) of the GaN-based UV sensor was 5.2 at forward bias to 467.9 at a reverse bias of -1 V. Unlike typical annealing methods, the local annealing method will be useful to change the contact property on the probing stage even after finishing the whole fabrication processes.
Funding Information
  • Ministry of Education, South Korea, through the BK21 Plus Project (21A20131600011)
  • National Research Foundation of Korea (2017R1D1A3B03028331)

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