Properties of high-temperature off-state currents in SOI MOSFETs derived from the diffusion mechanism
Authors:
- T. RudenkoTRT. Rudenko
- V. LysenkoVLV. Lysenko
- V. KilchytskaVKV. Kilchytska
- A. RudenkoARA. Rudenko
- J.-P. ColingeJCJ.-P. Colinge
- 1 January 1999
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 83-86
Abstract
In this paper, off-state leakage currents in long-channel SOI MOSFETs are investigated by simulation and measurements in the range 50-320°C. The general trends of high-temperature off-state currents are interpreted in terms of the diffusion mechanism. The back-gate biasing and silicon film thinning effects are considered. Both single- and double-gate operation cases are analyzedKeywords
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