Artificial Control of Giant Converse Magnetoelectric Effect in Spintronic Multiferroic Heterostructure

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Abstract
To develop voltage‐controlled magnetization switching technologies for spintronics applications, a highly (422)‐oriented Co2FeSi layer on top of the piezoelectric PMN‐PT(011) is experimentally demonstrated by inserting a vanadium (V) ultra‐thin layer. The strength of the growth‐induced magnetic anisotropy of the (422)‐oriented Co2FeSi layers can be artificially controlled by tuning the thicknesses of the inserted V and the grown Co2FeSi layers. As a result, a giant converse magnetoelectric effect (over 10−5 s m−1) and a non‐volatile binary state at zero electric field are simultaneously achieved in the (422)‐oriented Co2FeSi/V/PMN‐PT(011) multiferroic heterostructure. This study leads to a way toward magnetoresistive random‐access‐memory (MRAM) with a low power writing technology.
Funding Information
  • Japan Science and Technology Agency (JPMJCR18J1)
  • Japan Society for the Promotion of Science (JP21H05000, 22H04964, JP22H05000, JP24H00034, JP24K17309)
  • Toyota Physical and Chemical Research Institute

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