Improving Electrical Performances of $p$ -Type SnO Thin-Film Transistors Using Double-Gated Structure
Authors:
- 12 August 2015
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 36 (10) , 1053-1055
Abstract
p-type SnO thin-film transistors (TFTs) using a nominally symmetrical double-gated (DG) structure were studied in this letter. The top and bottom gates can be biased independently (single-gated mode) or jointly to switch the device (DG mode). For the latter operation, it is shown that ON current, subthreshold swing, and OFF-state current of the SnO TFT are all improved as compared with the operations when only one of the two gates is biased. As the device is operated under the DG mode, field-effect mobility of 6.54 cm 2 /V-s, high ON/OFF current ratio of > 10 5 , and subthreshold swing of 143 mV/decade are obtained. Moreover, the capability of the device in tuning its transfer characteristics under the single-gated operation with the bias applied to the opposite gate is also confirmed.Keywords
Funding Information
- Ministry of Science and Technology, Taiwan (NSC-102-2221-E-009-097-MY3)
- NCTU–UCB I-RiCE program (MOST-104-2911-I-009-301)
- Ministry of Education, Taiwan, under the Aim for the Top University and Elite Research Center Development Plan Program
This publication has 18 references indexed in Scilit:
- Magnetron-Sputtered SnO Thin Films for p-Type and Ambipolar TFT ApplicationsECS Journal of Solid State Science and Technology, 2014
- Effects of air-annealing on the electrical properties of p-type tin monoxide thin-film transistorsSemiconductor Science and Technology, 2014
- Bulk Accumulation a-IGZO TFT for High Current and Turn-On Voltage UniformityIEEE Electron Device Letters, 2013
- Record Mobility in Transparent p-Type Tin Monoxide Films and Devices by Phase EngineeringACS Nano, 2013
- Fabrication of p-Type SnO Thin-Film Transistors by Sputtering with Practical Metal ElectrodesJapanese Journal of Applied Physics, 2013
- Recyclable, Flexible, Low‐Power Oxide ElectronicsAdvanced Functional Materials, 2012
- Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilitiesApplied Physics Letters, 2012
- Ambipolar Oxide Thin‐Film TransistorAdvanced Materials, 2011
- Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealingApplied Physics Letters, 2010
- Fabrication and Characterization of Multiple-Gated Poly-Si Nanowire Thin-Film Transistors and Impacts of Multiple-Gate Structures on Device FluctuationsIEEE Transactions on Electron Devices, 2008