Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers
- 9 August 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (7) , 073503
Abstract
Significant improvement in open circuit voltage and fill factor was achieved for microcrystalline silicon (μc-Si:H) solar cells deposited by plasma-enhanced chemical vapor deposition (PECVD) by the incorporation of an intrinsic μc-Si:Hp∕i buffer layer fabricated by hot-wire (HW) CVD. The improved p∕i interface quality, likely due to the ion-free deposition on the p layers in the HWCVD process, was concluded from a considerably enhanced blue light response in such solar cells. Using this buffer layer concept allows the authors to apply high deposition rate PECVD processes for the μc-Si:Hi layer material, yielding a high efficiency of 10.3% for a single junction μc-Si:H solar cell.Keywords
This publication has 18 references indexed in Scilit:
- Novel aspects in thin film silicon solar cells–amorphous, microcrystalline and nanocrystalline siliconThin Solid Films, 2004
- Preparation of microcrystalline single junction and amorphous–microcrystalline tandem silicon solar cells entirely by hot-wire CVDSolar Energy Materials and Solar Cells, 2004
- Deposition of HWCVD poly-Si films at a high growth rateThin Solid Films, 2003
- Investigation of the optoelectronic properties of μc-Si:H pin solar cellsJournal of Non-Crystalline Solids, 2000
- Intrinsic microcrystalline silicon: A new material for photovoltaicsSolar Energy Materials and Solar Cells, 2000
- Microcrystalline silicon and micromorph tandem solar cellsApplied Physics A, 1999
- Texture etched ZnO:Al coated glass substrates for silicon based thin film solar cellsThin Solid Films, 1999
- Structural properties of microcrystalline silicon in the transition from highly crystalline to amorphous growthPhilosophical Magazine A, 1998
- Formation of Polysilicon Films by Catalytic Chemical Vapor Deposition (cat-CVD) MethodJapanese Journal of Applied Physics, 1991
- Low Temperature Deposition of Silicon Nitride by the Catalytic Chemical Vapor Deposition MethodJapanese Journal of Applied Physics, 1989