Ultracompact directional couplers realized in InP by utilizing feature size dependent etching.
- 19 August 2008
- journal article
- Published by Optica Publishing Group in Optics Letters
- Vol. 33 (17) , 1927-1929
Abstract
We present the design, fabrication, and measurement of an ultracompact directional coupler in . By utilizing the lag effect in the dry etching process, in one etch step, deeply etched asymmetric waveguides with a shallow groove in between are fabricated. This special property enhances the coupling efficiency for the directional coupler and thus makes the device ultracompact. We demonstrate directional couplers as short as , which is only the length of the conventional design.
Keywords
This publication has 10 references indexed in Scilit:
- Sidewall passivation assisted by a silicon coverplate during Cl2–H2 and HBr inductively coupled plasma etching of InP for photonic devicesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2008
- Characterization of the feature-size dependence in Ar∕Cl2 chemically assisted ion beam etching of InP-based photonic crystal devicesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2006
- Optimization of a Cl2–H2 inductively coupled plasma etching process adapted to nonthermalized InP wafers for the realization of deep ridge heterostructuresJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2006
- Polarization-independent optical directional coupler based on slot waveguidesOptics Letters, 2006
- Directional couplers realized on silicon-on-insulatorIEEE Photonics Technology Letters, 2005
- A compact silicon-on-insulator polarization splitterIEEE Photonics Technology Letters, 2004
- Fabrication of low loss two-dimensional InP photonic crystals by inductively coupled plasma etchingJournal of Applied Physics, 2004
- Nonlinear optical switching matrixOptics Letters, 2003
- Characterization of reactive ion etch lag scalingJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2001
- Microscopic uniformity in plasma etchingJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1992