Effect of reactive magnetron sputtering parameters on structural and electrical properties of hafnium oxide thin films

This publication has 21 references indexed in Scilit:

• Surface photovoltage and Auger electron spectromicroscopy studies of HfO2/SiO2/4H-SiC and HfO2/Al2O3/4H-SiC structures
  Applied Surface Science, 2012
• Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices
  Applied Surface Science, 2012
• Reliability issues of double gate dielectric stacks based on hafnium dioxide (HfO2) layers for non-volatile semiconductor memory (NVSM) applications
  Microelectronics Reliability, 2012
• Hafnium oxide passivation of InGaAs/InP heterostructure bipolar transistors by electron beam evaporation
  physica status solidi (c), 2011
• Electronic Properties of Thin HfO₂Films Fabricated by Atomic Layer Deposition on 4H-SiC
  Acta Physica Polonica A, 2011
• Study of the effect of thermal annealing on high k hafnium oxide thin film structure and electrical properties of MOS and MIM devices
  Journal of Materials Science: Materials in Electronics, 2010
• Structure and optical properties of HfO2 thin films on silicon after rapid thermal annealing
  Optical Materials, 2010
• Chemical structure and electrical properties of sputtered HfO2 films on Si substrates annealed by rapid thermal annealing
  Vacuum, 2009
• On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors
  Microelectronic Engineering, 2006
• Over-Erase Phenomenon in SONOS-Type Flash Memory and its Minimization Using a Hafnium Oxide Charge Storage Layer
  IEEE Transactions on Electron Devices, 2004