Overcoming Indium-Tin-Oxide Optical Losses in InAs Colloidal Quantum-Dot Light-Emitting Diodes at 1550 nm

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Abstract
Light-emitting diodes (LEDs) based on colloidal InAs quantum dots (QDs) have emerged as promising light sources for the short-wave infrared (SWIR) range. However, their development is limited by relatively low photoluminescence quantum yield as well as intrinsic device design challenges. Here, we report LEDs with electroluminescence (EL) in the SWIR based on InAs/ZnSe core/shell colloidal QDs, synthesized via a seedless one-pot approach that enables the rapid growth of relatively large InAs cores. Zirconium-doped indium oxide (InZrO) was used as the bottom transparent electrode owing to its significantly higher infrared transparency compared to the commonly employed tin-doped indium oxide (ITO). These two key innovations pushed the EL beyond 1500 nm, with external quantum efficiencies of 3.0, 1.2, and 0.6% at 1093, 1198, and 1547 nm, respectively.
Funding Information
  • European Research Council (101095974)
  • European Research Council (101156586)
  • HORIZON EUROPE European Innovation Council (101162112)
  • Istituto Italiano di Tecnologia
  • Ministero dell’Istruzione, dell’Università e della Ricerca (FIS-2023-03302)
  • Ministero dell’Istruzione, dell’Università e della Ricerca (PE0000023-NQSTI)
  • European Regional Development Fund
  • Deutsche Forschungsgemeinschaft (EXC 3035 - 533607596)
  • Deutsche Forschungsgemeinschaft (GRK 2767 - 451785257)
  • Ministerio de Ciencia, Tecnología e Innovación (PID2024-159087OB-I00)

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