Atomic layer deposited ultrathin TiO2 layer and its influence on the MoS2/TiO2 and MoS2/TiO2/Ru interfaces
Authors:
- Roman I. RomanovRRRoman I. Romanov
- Yuri Yu. LebedinskiiYLYuri Yu. Lebedinskii
- Ivan V. ZabrosaevIZIvan V. Zabrosaev
- Viktor LiVLViktor Li
- Ilya A. ZavidovskiyIlya A. Zavidovskiy
- Dmitry I. YakubovskyDmitry I. Yakubovsky
- Alexey D. BolshakovABAlexey D. Bolshakov
- Andrey M. MarkeevAndrey M. Markeev
Abstract
No abstract availableFunding Information
- Ministry of Science and Higher Education of the Russian Federation (FSMG-2024-0014)
- Ministry of Science and Higher Education of the Russian Federation (FSMG-2026-0021)
- Ministry of Science and Higher Education of the Russian Federation (075-03-2026-305 16.01.2026)
- Ministry of Education and Science of the Russian Federation
- Russian Science Foundation (24-19-00278)
This publication has 56 references indexed in Scilit:
- Binding energy referencing in X-ray photoelectron spectroscopy: Expanded data set confirms that adventitious carbon aligns to the sample vacuum levelApplied Surface Science, 2024
- Functionalizing self-assembled monolayers to reduce interface scattering in ruthenium/dielectric for next-generation microelectronic interconnectsApplied Surface Science, 2023
- Enhanced photoresponse of TiO2/MoS2 heterostructure phototransistors by the coupling of interface charge transfer and photogatingNano Research, 2020
- Band Alignment in As‐Transferred and Annealed Graphene/MoS2 HeterostructuresPhysica Status Solidi (RRL) – Rapid Research Letters, 2019
- Reliable determination of chemical state in x-ray photoelectron spectroscopy based on sample-work-function referencing to adventitious carbon: Resolving the myth of apparent constant binding energy of the C 1s peakApplied Surface Science, 2018
- Band alignment of atomic layer deposited TiO 2 /multilayer MoS 2 interface determined by x -ray photoelectron spectroscopyJournal of Alloys and Compounds, 2017
- Complementary Unipolar WS2 Field‐Effect Transistors Using Fermi‐Level Depinning LayersAdvanced Electronic Materials, 2015
- Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic PrecursorsChemical Vapor Deposition, 2014
- Elastic Scattering Corrections in AES and XPS. II. Estimating Attenuation Lengths and Conditions Required for their Valid Use in Overlayer/Substrate ExperimentsSurface and Interface Analysis, 1997
- XPS analysis of the oxidation reaction of ruthenium-chalcogenide photoelectrodesApplied Surface Science, 1986