Nonvolatile Resistive Switching Memory Device Employing CdSe/CdS Core/Shell Quantum Dots as an Electrode Modification Layer
- 4 March 2020
- journal article
- research article
- Published by American Chemical Society (ACS) in ACS Applied Electronic Materials
- Vol. 2 (3) , 827-837
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education of the People's Republic of China (2017KFYXJJ039)
- Natural Science Foundation of Hubei Province (2017CFB417)
- National Natural Science Foundation of China (61725401, 61804061, 61974052)
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