Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate

This publication has 14 references indexed in Scilit:

• Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
  Applied Physics Express, 2010
• Defect and emission distributions in bulk GaN grown in polar and nonpolar directions: a comparative analysis
  2008
• Low leakage Schottky rectifiers fabricated on homoepitaxial GaN
  Applied Physics Letters, 2007
• High breakdown voltage Schottky rectifier fabricated on bulk n-GaN substrate
  Solid-State Electronics, 2006
• Influence of different types of threading dislocations on the carrier mobility and photoluminescence in epitaxial GaN
  Applied Physics Letters, 2002
• Vertical and lateral GaN rectifiers on free-standing GaN substrates
  Applied Physics Letters, 2001
• Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage
  Applied Physics Letters, 2001
• High voltage (450 V) GaN Schottky rectifiers
  Applied Physics Letters, 1999
• Study of Schottky barriers on n-type GaN grown by low-pressure metalorganic chemical vapor deposition
  Applied Physics Letters, 1995
• Forward I-V plot for nonideal Schottky diodes with high series resistance
  Journal of Applied Physics, 1985