Reactive ion etching of poly (cyclohexene carbonate) in oxygen plasma
Authors:
- Xingjun XueXXXingjun Xue
- Kun ZhouKZKun Zhou
- Jian CaiJCJian Cai
- Qian WangQWQian Wang
- Zheyao WangZWZheyao Wang
- 1 May 2018
- journal article
- research article
- Published by Elsevier in Microelectronic Engineering
- Vol. 191, 1-9
Abstract
No abstract availableKeywords
Funding Information
- National Natural Science Foundation of China (61734004, 21627812)
This publication has 34 references indexed in Scilit:
- Polyimide foam-like microstructures: technology and mechanical propertiesJournal of Micromechanics and Microengineering, 2011
- Characterization of reactive ion etching of benzocyclobutente in SF6/O2 plasmasMicroelectronic Engineering, 2010
- Sacrificial polymers for nanofluidic channels in biological applicationsNanotechnology, 2003
- Air-channel fabrication for microelectromechanical systems via sacrificial photosensitive polycarbonatesJournal of Microelectromechanical Systems, 2003
- Effects of gas pressure and substrate temperature on the etching of parylene-N using a remote microwave oxygen plasmaJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2001
- Single-chip condenser microphone using porous silicon as sacrificial layer for the air gapSensors and Actuators A: Physical, 2001
- Investigation of Polyimide Residue Due to Reactive Ion Etching in O 2Journal of the Electrochemical Society, 1996
- A survey on the reactive ion etching of silicon in microtechnologyJournal of Micromechanics and Microengineering, 1996
- Plasma etching and modification of organic polymersPure and Applied Chemistry, 1990
- Oxygen plasma etching for resist stripping and multilayer lithographyJournal of Vacuum Science & Technology B, 1989