Rankings
Publications
Search Publications
Cited-by Search
Sources
Publishers
Scholars
Scholars
Top Cited Scholars
Organizations
About
Scilit
About Us
Advisory Board
Data Sources
Career
Support / Contact
User Guide
Publisher User
Search Function
Rankings Function
API Resource
Scilit Knowledge
Metrics
Scilit Recognitions
Publications Classification
Media
News
Blog
Login
Register
Home
Publications
Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm‐wave applications
Home
Publications
Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm‐wave applications
Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm‐wave applications
Authors:
PB
Peter Brückner
Peter Brückner
RK
R. Kiefer
R. Kiefer
CH
C. Haupt
C. Haupt
AL
A. Leuther
A. Leuther
SM
S. Müller
S. Müller
RQ
R. Quay
R. Quay
DS
D. Schwantuschke
D. Schwantuschke
MM
M. Mikulla
M. Mikulla
OA
O. Ambacher
O. Ambacher
Article Alert
Citation Alert
Add to Library
Cite
Download
Share
Download
Download PDF
Download
Publisher website
Google Scholar
26 January 2012
journal article
research article
Published by
Wiley
in
physica status solidi (c)
Vol. 9
(3-4)
,
903-906
DOI:
10.1002/pssc.201100462
Abstract
No abstract available
Keywords
GAN
HEMT
PERFORMANCE
MM-WAVE
Cited
Cited by 18 articles
Scroll to top