Low drive voltage 10 Gb/s and high contrast 40 Gb/s silicon slow wave modulators
- 1 August 2012
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 195-197
Abstract
We demonstrate the use of slow light to reduce the drive voltage and shrink the footprint of carrier depletion-based silicon modulators. Hence, low drive voltage 10 Gb/s modulation and high contrast 40Gb/s modulation is achieved.Keywords
This publication has 8 references indexed in Scilit:
- Ultra-low-power carrier-depletion Mach-Zehnder silicon optical modulatorOptics Express, 2012
- 25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctionsOptics Express, 2012
- Low-voltage high-performance silicon photonic devices and photonic integrated circuits operating up to 30 Gb/sOptics Express, 2011
- 50-Gb/s Silicon Optical ModulatorIEEE Photonics Technology Letters, 2011
- High speed silicon electro-optical modulators enhanced via slow light propagationOptics Express, 2011
- 40 Gb/s silicon photonics modulator for TE and TM polarisationsOptics Express, 2011
- High contrast 40Gbit/s optical modulation in siliconOptics Express, 2011
- High-speed and compact silicon modulator based on a racetrack resonator with a 1 V drive voltageOptics Letters, 2010