Wide Bandgap Semiconductor Power Devices
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
- Vol. 483
Abstract
The present status of high-voltage power semiconductor switching devices is reviewed. The choice and design of device structures are presented. The simulated performance of the key devices in 4H-SiC is described. The progress in high-voltage power device experimental demonstration is described. The material and process technology issues that need to be addressed for device commercialization are discussed.Keywords
This publication has 10 references indexed in Scilit:
- 700-V asymmetrical 4H-SiC gate turn-off thyristors (GTO's)IEEE Electron Device Letters, 1997
- Ionization rates and critical fields in 4H silicon carbideApplied Physics Letters, 1997
- High-voltage double-implanted power MOSFET's in 6H-SiCIEEE Electron Device Letters, 1997
- Electric breakdown in GaN p-n junctionsApplied Physics Letters, 1996
- Theoretical Prediction of Zinc Blende Phase GaN Avalanche Photodiode Performance Based on Numerically Calculated Electron and Hole Impact Ionization Rate RatioMRS Proceedings, 1996
- Wide bandgap compound semiconductors for superior high-voltage unipolar power devicesIEEE Transactions on Electron Devices, 1994
- Numerical analysis of short-circuit safe operating area for p-channel and n-channel IGBTsIEEE Transactions on Electron Devices, 1991
- Power semiconductor device figure of merit for high-frequency applicationsIEEE Electron Device Letters, 1989
- Optimum semiconductors for high-power electronicsIEEE Transactions on Electron Devices, 1989
- A new MOS-gate bipolar transistor for power switchesIEEE Transactions on Electron Devices, 1986