The structure and crystallization characteristics of phase change optical disk material Ge1Sb2Te4

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Abstract
The crystallization characteristics of amorphous Ge1Sb2Te4 thin films were studied by means of time‐resolved transition measurements. It was found that a metastable phase appeared at the first stage of the crystallization process and then the metastable phase was transformed into a stable crystalline phase at higher annealing temperatures. The x‐ray diffraction and transmission electron microscopy results indicated the metastable phase was identified as a face‐centered‐cubic structure and the stable crystalline phase corresponded to a hexagonal structure. Our experimental results show that the Ge1Sb2Te4 materials are applicable for phase change erasable optical storage.

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