First Operation of AlGaN Channel High Electron Mobility Transistors
Authors:
- Takuma NanjoTNTakuma Nanjo
- Misaichi TakeuchiMTMisaichi Takeuchi
- Muneyoshi SuitaMSMuneyoshi Suita
- Yuji AbeYAYuji Abe
- Toshiyuki OishiTOToshiyuki Oishi
- Yasunori TokudaYTYasunori Tokuda
- Yoshinobu AoyagiYAYoshinobu Aoyagi
- 28 December 2007
- journal article
- Published by IOP Publishing in Applied Physics Express
- Vol. 1 (1)
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- Highly Reliable 250 W GaN High Electron Mobility Transistor Power AmplifierJapanese Journal of Applied Physics, 2005
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- Highly resistive GaN layers formed by ion implantation of Zn along the c axisJournal of Applied Physics, 2003
- Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSBIEEE Transactions on Electron Devices, 2001