Atomic Layer Deposition of Aluminum Nitride Using Tris(diethylamido)aluminum and Hydrazine or Ammonia
- 1 March 2018
- journal article
- Published by Pleiades Publishing Ltd in Russian Microelectronics
- Vol. 47 (2) , 118-130
Abstract
Aluminum nitride (AlN x) films were obtained by atomic layer deposition (ALD) using tris(diethylamido) aluminum(III) (TDEAA) and hydrazine (N2H4) or ammonia (NH3). The quartz crystal microbalance...Keywords
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