Interfacial Dopants for Dual-Dielectric, Charge-Storage Cells
Authors:
- D. KahngDKD. Kahng
- W. J. SundburgWSW. J. Sundburg
- D. M. BoulinDBD. M. Boulin
- J. R. LigenzaJLJ. R. Ligenza
- 1 November 1974
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 53 (9) , 1723-1739
Abstract
When a suitable interfacial dopant, such as W, is introduced at the interface between the dielectrics of a DDC cell, the write-erase characteristics of the cell are greatly improved. The useful range of the dopant concentration is determined to lie b...Keywords
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