Enhanced performance of organic light emitting device by insertion of conducting/insulating WO3 anodic buffer layer
Authors:
- Jingze LiJLJingze Li
- Masayuki YahiroMYMasayuki Yahiro
- Kenji IshidaKIKenji Ishida
- Hirofumi YamadaHYHirofumi Yamada
- Kazumi MatsushigeKMKazumi Matsushige
- 1 June 2005
- journal article
- Published by Elsevier in Synthetic Metals
- Vol. 151 (2) , 141-146
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Comparative study of metal or oxide capped indium–tin oxide anodes for organic light-emitting diodesJournal of Applied Physics, 2003
- A robust ultrathin, transparent gold electrode tailored for hole injection into organic light-emitting diodesJournal of Materials Chemistry, 2003
- Recent progress of molecular organic electroluminescent materials and devicesMaterials Science and Engineering: R: Reports, 2002
- Lowering of operational voltage of organic electroluminescent devices by coating indium-tin-oxide electrodes with a thin CuOx layerApplied Physics Letters, 2002
- Modification of Indium Tin Oxide for Improved Hole Injection in Organic Light Emitting DiodesAdvanced Materials, 2001
- Stability/instability of conductivity and work function changes of ITO thin films, UV-irradiated in air or vacuum: Measurements by the four-probe method and by Kelvin force microscopySynthetic Metals, 2001
- Organic–inorganic multilayer structures: a novel route to highly efficient organic light-emitting diodesSynthetic Metals, 1999
- Organic electroluminescent devices with improved stabilityApplied Physics Letters, 1996
- Multilayered organic electroluminescent device using a novel starburst molecule, 4,4′,4″-tris(3-methylphenylphenylamino)triphenylamine, as a hole transport materialApplied Physics Letters, 1994
- Organic electroluminescent diodesApplied Physics Letters, 1987