Bipolar tunneling field-effect transistor: A three-terminal negative differential resistance device for high-speed applications
Authors:
- 9 May 1988
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (19) , 1608-1610
Abstract
Carrier injection across a tunnel homojunction is suggested as a new mechanism for a high-speed three-terminal device. The novel feature is the two-dimensional homojunction tunneling within a bipolar modulation doping structure. Negative differential resistance characterized by large peak-to-valley current ratios and high transconductance is anticipated. Estimates of the relevant time constants of the tunnel structure suggest the possibility of very high frequency operation.Keywords
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