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Hall Mobility of the Electron Inversion Layer in 6H-SiC MOSFETs
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Hall Mobility of the Electron Inversion Layer in 6H-SiC MOSFETs
Hall Mobility of the Electron Inversion Layer in 6H-SiC MOSFETs
Authors:
NS
N.S. Saks
N.S. Saks
SM
S.S. Mani
S.S. Mani
AA
Anant K. Agarwal
Anant K. Agarwal
VH
V.S. Hegde
V.S. Hegde
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10 May 2000
journal article
Published by
Trans Tech Publications, Ltd.
in
Materials Science Forum
Vol. 338-342
,
737-740
DOI:
10.4028/www.scientific.net/msf.338-342.737
Abstract
No abstract available
Keywords
CHARGE-SHEET MODEL
HALL-EFFECT
INTERFACE STATES (OR TRAPS)
INVERSION LAYER
MOBILITY
MOS
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Cited by 18 articles
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