Effective carrier doping and quantum capacitance manipulation of graphene through two-dimensional solid electrolytes of ScI3 and YBr3
Authors:
- Binyu YingBYBinyu Ying
- Baojuan XinBXBaojuan Xin
- Kaixin ZouKZKaixin Zou
- Wentao WuWWWentao Wu
- Luyan LiLLLuyan Li
- Yahui ChengYCYahui Cheng
- Hong DongHDHong Dong
- Hui LiuHLHui Liu
- Mengjian ZhuMZMengjian Zhu
- Feng LuFLFeng Lu
- Wei-Hua WangWWWei-Hua Wang
- 17 January 2023
- journal article
- research article
- Published by Elsevier in Applied Surface Science
- Vol. 616
Abstract
No abstract availableKeywords
Funding Information
- National Natural Science Foundation of China (11874223, 51871121)
- National Supercomputing Center of Tianjin
This publication has 49 references indexed in Scilit:
- Gas sensing properties of graphene synthesized by chemical vapor depositionMaterials Science and Engineering: C, 2011
- Synthesis of N-Doped Graphene by Chemical Vapor Deposition and Its Electrical PropertiesNano Letters, 2009
- The electronic properties of grapheneReviews of Modern Physics, 2009
- Effect of Water Vapor on Electrical Properties of Individual Reduced Graphene Oxide SheetsThe Journal of Physical Chemistry C, 2008
- Measurement of the Elastic Properties and Intrinsic Strength of Monolayer GrapheneScience, 2008
- Giant Intrinsic Carrier Mobilities in Graphene and Its BilayerPhysical Review Letters, 2008
- Carrier statistics and quantum capacitance of graphene sheets and ribbonsApplied Physics Letters, 2007
- Improved grid‐based algorithm for Bader charge allocationJournal of Computational Chemistry, 2007
- Electric Field Effect in Atomically Thin Carbon FilmsScience, 2004
- Ab initiomolecular dynamics for liquid metalsPhysical Review B, 1993