Location of lanthanide impurity energy levels in the III–V semiconductor AlxGa1−xN (0⩽x⩽1)
Authors:
- P. DorenbosPDP. Dorenbos
- E. van der KolkEKE. van der Kolk
- 1 March 2008
- journal article
- Published by Elsevier in Optical Materials
- Vol. 30 (7) , 1052-1057
Abstract
No abstract availableKeywords
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