A method for simulating the influence of grain boundaries and material interfaces on electromigration
Author:
- Lado FilipovicLFLado Filipovic
- 1 June 2019
- journal article
- research article
- Published by Elsevier in Microelectronics Reliability
- Vol. 97, 38-52
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Large-scale 3D random polycrystals for the finite element method: Generation, meshing and remeshingComputer Methods in Applied Mechanics and Engineering, 2011
- Electromigration in submicron interconnect features of integrated circuitsMaterials Science and Engineering: R: Reports, 2011
- Improved estimation of the resistivity of pure copper and electrical determination of thin copper film dimensionsMicroelectronics Reliability, 2001
- Diffusion and electromigration of copper in SiO2-passivated single-crystal aluminum interconnectsApplied Physics Letters, 1999
- Calculated electromigration wind force in face-centered-cubic and body-centered-cubic metalsJournal of Applied Physics, 1998
- Analysis of grain-boundary structure in Al–Cu interconnectsJournal of Applied Physics, 1997
- Surface Plasmon Spectroscopy of Nanosized Metal ParticlesLangmuir, 1996
- Computer simulation of electromigration in thin-film metal conductorsJournal of Applied Physics, 1994
- Electrical-Resistivity Model for Polycrystalline Films: the Case of Arbitrary Reflection at External SurfacesPhysical Review B, 1970
- Electromigration—A brief survey and some recent resultsIEEE Transactions on Electron Devices, 1969