A comparison of fundamental gate-driver topologies for high frequency applications
Authors:
- M.A. de RooijMRM.A. de Rooij
- J.D. van WykJWJ.D. van Wyk
- 10 June 2004
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 1045-1052
Abstract
The gate-driver in most power electronic converters is seldom given sufficient attention during the design stage even though it is the circuit exposed to much of the same voltage stresses as the switching devices and yet despite this, is a crucial component to a sound functioning system. At higher switching frequencies, and either low power or high voltage applications, the effect of the gate-driver on the overall converter performance becomes even more pronounced. When considering a gate-driver for a power electronic system, the converter topology, operating conditions and requirements, voltage and current ratings, and switching frequency determines the suitability and applicability of a chosen gate-driver to the application. This paper discusses different gate-drivers, represented by three fundamental gate-driver topologies that are evaluated in terms of suitable operating conditions, construction and losses. These gate-drivers, constructed using two different methods, a hybrid and SMD, also forms part of the evaluation. In addition, some of the issues as switching frequencies keep increasing is also addressed.Keywords
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