Annealing Properties of Sputtered CoSi2 and Sputtered and Reactive Sputtered TiN Contacts on n-Si
Author:
- Ghader EftekhariGEGhader Eftekhari
- 1 January 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (1R) , 66-67
Abstract
Thermal stability of sputtered CoSi2 and TiN and reactive sputtered TiN contacts on n-Si were examined. It was determined that reactively sputtered contacts with 70% Ar and 30% N2 have better properties than the other two contacts. CoSi2 contacts were found stable except a sharp increase in their reverse current was observed when annealed at temperature higher than 850°C.Keywords
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