Forward current enhanced elimination of the radiation induced boron-oxygen complex in silicon n+ -p diodes
- 16 July 2014
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 211 (11) , 2558-2562
Abstract
No abstract availableKeywords
Funding Information
- Romanian Academy of Sciences (F12RA-005)
- Romanian Authority for Scientific research (PCE 72/5.10.2011)
This publication has 22 references indexed in Scilit:
- Annealing kinetics of boron-containing centers in electron-irradiated siliconSemiconductors, 2013
- Latent complexes of interstitial boron and oxygen dimers as a reason for degradation of silicon-based solar cellsJournal of Applied Physics, 2010
- Reactions of interstitial carbon with impurities in silicon particle detectorsJournal of Applied Physics, 2007
- Characterization of the Initial Rapid Decay on Light-Induced Carrier Lifetime and Cell Performance Degradation of Czochralski-Grown SiliconJapanese Journal of Applied Physics, 2003
- Carbon-Oxygen-Related Complexes in Irradiated and Heat-Treated Silicon: IR Absorption StudiesSolid State Phenomena, 2001
- Behavior of electron-irradiation-induced defects in GaAsPhysical Review B, 1990
- Recombination-Enhanced Reactions in SemiconductorsAnnual Review of Materials Science, 1982
- Recombination-enhanced migration of interstitial aluminum in siliconPhysical Review B, 1979
- Recombination enhanced defect reactionsSolid-State Electronics, 1978
- Defect energy levels in boron-doped silicon irradiated with 1-MeV electronsPhysical Review B, 1977