Effect of Mn Doping on the Dielectric and Electrical Conductivity of CaBi4Ti4O15Ceramics
- 29 October 2010
- journal article
- Published by Taylor & Francis in Ferroelectrics
- Vol. 404 (1) , 19-26
Abstract
Ca1-xMnxBi4Ti4O15 (CMBT) ceramics were prepared using solid state reaction method with x = 0 to 0.3. X-ray diffraction confirms the orthorhombic structure of CMBT ceramics. FTIR and Raman spectroscopy study indicates the formation of single phase layered perovskite material. Thermo-gravimetric studies shows that the thermal decomposition of carbonates was completed at 700°C for Mn doped samples whereas was 950°C for CaBi4Ti4O15 ceramic. DC conductivity exhibits non-Arrhenius behaviour and the activation energy decrease from 1.35 to 1.0eV with increase in x from 0 to 0.3. The room temperature dielectric constant decreases from 160 to 140 at 1MHz with the increase in Mn concentration (x = 0–0.3). Curie's temperature (790°C) was found to be independent of Mn incorporation at Ca site.Keywords
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