Structural and Electrical Properties of ZnO Thin Films Deposited by Atomic Layer Deposition at Low Temperatures
Authors:
- 1 January 2008
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 155 (10) , H738-H743
Abstract
In this study, ZnO thin films were deposited by atomic layer deposition (ALD) at various process temperatures. The purpose of this paper was to investigate the controllability of the preferred orientations of ZnO thin films by varying the process temperature and to determine the effect of the preferred orientations on the electrical properties of the films. The process temperature was varied from 70to250°C70to250°C at several increments while the other ALD process parameters were fixed. The deposition rates and uniformities, crystal structures, and electrical properties of these films were evaluated at the various process temperatures. At process temperatures of 70 and 90°C90°C , ZnO thin films showed strong (002) preferred orientations with cylindrical, fine, columnar crystal structures, almost a 1:1 stoichiometric chemical ratio of Zn to O, and n-type carrier concentrations in the range of 1016cm−31016cm−3 with resistivities of 0.1–1Ωcm0.1–1Ωcm . ZnO thin films deposited at temperatures higher than 110°C110°C had wedge-shaped crystal structures, high oxygen deficiencies, and higher n-type carrier concentrations up to 1020cm−31020cm−3 than the films deposited at lower temperatures.Keywords
This publication has 24 references indexed in Scilit:
- Growth and characterization of single crystal ZnO thin films using inductively coupled plasma metal organic chemical vapor depositionApplied Physics Letters, 2006
- Size control of ZnO nanorod arrays grown by metalorganic chemical vapour depositionNanotechnology, 2005
- High electron concentration and mobility in Al-doped n-ZnO epilayer achieved via dopant activation using rapid-thermal annealingJournal of Applied Physics, 2005
- ZnO-channel thin-film transistors: Channel mobilityJournal of Applied Physics, 2004
- Controlling preferred orientation of ZnO thin films by atomic layer depositionJournal of Materials Science, 2004
- One‐Dimensional Nanostructures: Synthesis, Characterization, and ApplicationsAdvanced Materials, 2003
- Recent advances in ZnO materials and devicesMaterials Science and Engineering: B, 2001
- Effects of Hydrogen on the Structural and Electro-optical Properties of Zinc Oxide Thin FilmsJournal of the Electrochemical Society, 2000
- Electrical properties of bulk ZnOSolid State Communications, 1998
- Electronic structure of ideal and relaxed surfaces of ZnO: A prototype ionic wurtzite semiconductor and its surface propertiesPhysical Review B, 1981