ZnO/GaN heterojunction based self-powered photodetectors: Influence of interfacial states on UV sensing
- 1 June 2019
- journal article
- research article
- Published by Elsevier in Applied Surface Science
- Vol. 478, 1081-1089
Abstract
No abstract availableKeywords
Funding Information
- CSIR-NPL
- Department of Science and Technology (DST/TM/CERI/C245(G))
- CSIR
- IAS
- INSA
- NASI
This publication has 49 references indexed in Scilit:
- Analytical modeling of bare surface barrier height and charge density in AlGaN/GaN heterostructuresApplied Physics Letters, 2012
- Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and InterfacesChemical Reviews, 2012
- Optical and luminescence properties of zinc oxide (Review)Optics and Spectroscopy, 2011
- Band offsets of polar and nonpolar GaN/ZnO heterostructures determined by synchrotron radiation photoemission spectroscopyPhysica Status Solidi (b), 2010
- Specific defects, surface band bending and characteristic green emissions of ZnOPhysical Chemistry Chemical Physics, 2010
- Investigation of Oxygen Vacancy and Interstitial Oxygen Defects in ZnO Films by Photoluminescence and X-Ray Photoelectron SpectroscopyChinese Physics Letters, 2007
- Origins of Fermi-level pinning on GaN and InN polar and nonpolar surfacesEurophysics Letters, 2006
- Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical-vapor depositionApplied Physics Letters, 2002
- Electronic structures of hexagonal ZnO/GaN interfacesJournal of Crystal Growth, 2000
- High efficiency GaInSbAs/GaSb type-II quantum well continuous wave lasersSemiconductor Science and Technology, 2000